Silicon carbide Schottky diode product series, do you know

What is the Silicon Carbide Schottky Diode product family? What does it do? Littelfuse, a global leader in circuit protection, today announced the introduction of four new 1200V Silicon Carbide (SiC) Schottky products that are part of its Gen 2 product family. The base diode family of products originally released in May 2017.

2nd Generation 1200V SiC Schottky Diode

The rated currents of the LSIC2SD120A08 series, LSIC2SD120A15 series and LSIC2SD120A20 series are 8A, 15A and 20A respectively, and they are packaged in the mainstream TO-220-2L. In addition, the LSIC2SD120C08 series is rated at 8A in a TO-252-2L package. The combined pn Schottky (MPS) device structure of the second-generation Schottky diodes ensures improved surge immunity and reduced leakage current. Replacing standard silicon bipolar power diodes with new 2nd generation SiC Schottky diodes enables circuit designers to significantly reduce switching losses, withstand high inrush currents without thermal runaway, and operate at temperatures up to 175° operate at a junction temperature of C. This helps greatly improve the efficiency and durability of power Electronic systems.

Typical applications for the new 2nd generation SiC Schottky diodes include:

Active Power Factor Correction (PFC)

Buck or boost stage of a DC-DC converter.

Inverter freewheeling diode

High frequency output rectification

Served markets include industrial power, solar, industrial motor drives, welding and plasma cutting, electric vehicle charging stations, induction cooktops, and more.

“The latest addition to Gen 2 SiC Schottky diodes enables circuit designers to reduce switching losses, withstand high inrush currents without thermal runaway, and operate at higher junction temperatures.” Littelfuse Power Supplies said Michael Ketterer, global product marketing manager for semiconductors. “They provide more component options for circuit designers looking to improve the efficiency, reliability and thermal management of the latest power electronics systems.”

Generation 2 SiC Schottky diodes offer the following key benefits:

Best-in-class capacitor storage charge and negligible reverse recovery current make these devices ideal for high frequency power switching applications, ensuring extremely low switching losses and reducing stress on the opposite switch.

Best-in-class forward voltage drop (VF) ensures low conduction losses.

A maximum junction temperature of 175°C provides greater design margin and more relaxed thermal management requirements. The above is the analysis of silicon carbide Schottky diode product series, I hope it can help you.

Author: Yoyokuo